منابع مشابه
A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs
We report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron mobility transistor (HEMT) structures for a special case. Extraction of the conduction channels from the magnetic field-dependent data can present number of problems; ev...
متن کاملGaN HEMTs and MMICs for space applications
We report on recent results from our GaN transistor and circuit technology. Epitaxial growth can be performed on either SiC or Si substrates in order to provide high-quality AlGaN/GaN heterostructures. These heterostructures are then utilized in order to realize transistors and integrated circuits ranging from high-voltage transistors for voltage conversion in efficient power switches, L/S-band...
متن کاملHydrodynamic Models for GaN-Based HEMTs
For the development of next-generation GaN-based high electron mobility transistors, reliable software tools for DC and AC simulation are required. A hydrodynamic approach must be used, as the drift diffusion models fail to deliver accurate results for such structures. We propose two different hydrodynamic mobility models which account for the peculiarities of the GaN material system. The model...
متن کاملatedA GaN/GaN HEMTs
Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.
متن کاملTechnology focus: GaN HEMTs
has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Materials Science: Materials in Electronics
سال: 2020
ISSN: 0957-4522,1573-482X
DOI: 10.1007/s10854-020-03590-6